Renesas introduces high-efficiency 650 V GaN FETs targeting EV charging and power electronics

Renesas Electronics has announced three new 650 V high-voltage gallium nitride (GaN) field-effect transistors (FETs) developed specifically for e-mobility charging stations, AI data center and server power supplies (including 800 V HVDC architectures) and battery energy storage. The fourth-generation plus (Gen IV Plus) devices—named TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS—are based on the proven SuperGaN platform acquired through Renesas’ 2024 takeover of Transphorm, utilizing depletion-mode (d-mode), normally-off GaN technology.

These Gen IV Plus GaN components offer lower switching losses, smaller size, and increased thermal efficiency compared to silicon and silicon carbide (SiC) counterparts. Specifically, the devices use a die 14 percent smaller than the previous generation, achieving a reduced on-resistance (R_DS(on)) of 30 milliohms (mΩ)—a 14 percent improvement—and offering a 20 percent improvement in the on-resistance output-capacitance product figure of merit (FOM). The smaller die size directly reduces output capacitance, enhancing efficiency and enabling higher power density, ultimately resulting in lower overall system costs.

Available in TOLT, TO-247, and TOLL packaging configurations, these GaN FETs give engineers broad flexibility for optimizing thermal management and PCB layouts in power systems ranging from one to 10 kW, with higher ratings achievable through paralleling configurations. Surface-mount options (TOLL and TOLT) provide bottom- or top-side thermal conduction paths, optimizing cooling and aiding simpler device paralleling. The traditional TO-247 package offers enhanced thermal dissipation suitable for applications requiring higher power handling.

Renesas emphasizes the devices’ silicon-compatible gate drive inputs, allowing use of standard silicon MOSFET gate drivers rather than specialized drivers typically required by enhancement-mode (e-mode) GaN alternatives. This architecture lowers barriers to adoption, simplifies integration, and reduces complexity for engineers aiming to transition from silicon to GaN-based designs.

“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”

The new Gen IV Plus GaN FETs and associated 4.2 kW Totem-Pole PFC GaN Evaluation Platform (RDTTP4200W066A-KIT) are currently available for sampling and prototyping.

Source: Renesas Electronics